Hostname: page-component-848d4c4894-x24gv Total loading time: 0 Render date: 2024-05-14T14:18:32.653Z Has data issue: false hasContentIssue false
  • English
  • Français

Interface Characterization and Delamination Mechanism of c-BN Film

Published online by Cambridge University Press:  10 February 2011

Ig-Hyeon Kim ,
Changmo Sung ,
Sang-Ro Lee  and
Young-Woon Seo
Ig-Hyeon Kim
Affiliation:
Center for Advanced Materials, University of Massachusetts. Lowell, MA 01854, USA
Changmo Sung
Affiliation:
Center for Advanced Materials, University of Massachusetts. Lowell, MA 01854, USA
Sang-Ro Lee
Affiliation:
Division of Thin Film Process, Korea Institute of Metal and Machinery, Changwon, Korea
Young-Woon Seo
Affiliation:
V & P International Inc. Youngin, Korea
Get access

Abstract

Cubic boron nitride films were prepared by helicon wave plasma CVD process on (100) Si. The growth and delamination mechanism of c-BN film was investigated with FT-IR spectroscopy and transmission electron microscopy. The film deposited under the intense impact of energetic ions is usually delaminated from the substrate after deposition. It is found that moisture in the air, surface roughness of the film and substrate, as well as severe compressive stresses in the film are the primary contributors to film delamination. An aqueous oxidation was verified by EDXS analysis, which generate local stress by volume expansion at the crack region in the c-BN layer. From the experimental results and ??? observation a model for the delamination mechanism of c-BN film is suggested. Based on the delamination mechanism, several kinds of remedies such as post annealing and post N2 plasma treatment were carried out for improving the adhesion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 458: Symposium W – Interfacial Engineering for Optimized Properties , 1996 , 443
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsuda, O., Yamada, Y., Fujii, T., and Yoshida, T., J. Vac. Sci. Technol., A 13(6), 2843 (1995).Google Scholar
2. Kaneda, K. and Shibata, K., Jpn. J. Appl. Phys., Vol. 33, 2661 (1994).Google Scholar
3. Eddy, C.R. Jr and Startwell, B.D., J. Vac. Sci. Technol., A 13(4), 2081 (1995).Google Scholar
4. Osaka, Y., Okamoto, M., and Utsumi, Y., Mater. Rev. Soc. Symp. Proc., 223, 81 (1991).Google Scholar
5. Ikedq, T., Kawate, Y., and Hirai, Y., J. Vac. Sci. Technol., A 8, 3168 (1990).Google Scholar
6. Cardinale, G.F., Mirkarimi, P.B., McCarty, K.F., Klaus, E.J., Medlin, D.L., Clift, W.M., and Howitt, D.G., Thin Solid Films, 253, 130 (1994).Google Scholar
7. Boswell, R.W. and Porteous, R.K., Appl. Phys. Lett., 50, 1130(1987).Google Scholar
8. Kim, I-H, Kim, K-S, Kim, S-H, and Lee, S-R, Thin Solid Films, - in press.Google Scholar
9. Kim, I-H, Kim, K-S, and Kim, S-H, J. Vac. Sci. Technol., -in press.Google Scholar
10. Stoney, G., Proc. R. Soc. London, Ser. A, 82, 172 (1909).Google Scholar
11. Geick, R., Perry, C.H., and Rupprecht, G., Phys. rev. 146, 543 (1966).Google Scholar