Skip to main content Accessibility help
×
Home

Interdiffusion Behavior of Si/Si1−x Gex. Layers in Inert and Oxidizing Ambients

  • Michelle Griglione (a1), Tim Anderson (a1), Yaser Haddara (a2), Mark Law (a2) and Kevin Jones (a3)...

Abstract

Interdiffusion of Si/Si0.85Ge0.15 heterojunctions subjected to annealing in inert and oxidizing ambients was investigated as a function of temperature (900 to 1200 °C) and time, allowing comparison between intrinsic diffusion and diffusion under interstitial injection. The Ge diffusivity was extracted using the process simulation program FLOOPS. A time-independent diffusivity was observed for all temperatures. The calculated Ge diffusivity in oxidizing ambient was comparable to that in inert ambient indicating that the interstitial concentration plays a minimal role in interdiffusion. A fractional interstitial component, f1, equal to 0.10 is estimated for annealing temperatures in the range 900 to 1100 °C, while f1 increases to approximately 0.17 at 1200 °C. This may indicate a change in diffusion mechanism at a temperature greater than 1100 °C

Copyright

References

Hide All
1. Law, M.E., FLOOPS User's Manual, (University of Florida, Gainesville, FL, August 1996).
2. Fahey, P.M., Griffin, P.B., J.D Plummer, Rev. Mod. Phys. 61, 289 (1989).
3. Newey, J.P., Robbins, D.J., Wallis, D., Proc. of the 1 1th Int. Conf. on Secondary Ion Mass Spectrometry, edited by Lareau, R., Gillen, G. and Stevie, F. (J. Wiley & Sons, 1998), p. 979.
4. Kruger, D., Ilfgen, K., Heinemann, B., Krups, R., Benninghoven, A., 4th Int. Workshop on Measurement, Characterization and Modeling of Ultra-shallow Doping Profiles in Semiconductors, April 1997, p. 9.1.
5. Sunamura, H., Fukatsu, S., Usami, N., Shiraki, Y., Jpn. J. Appl. Phys. 33, 2344 (1994).
6. Zaumseil, P., Jaghold, U., Kruger, D., J. Appl. Phys. 76, 2191 (1994).
7. Hollander, B., Mantl, S., Stritzker, B., Jorke, H., Kasper, E., J. Mater. Res. 4, 163 (1989).
8. Van Ijzendoorn, L.J., Van De Walle, G.F.A., Van Gorkum, A.A, Theunissen, A.M.L, Van de Heuvel, R.A, Barrett, J.H., Nucl. Instr. and Meth. in Phys. Res. B 50, 127 (1990).
9. Fahey, P., Iyer, S.S., Scilla, G.J., Appl. Phys. Lett 54, 843 (1989).
10. Cowern, N.E.B., Proc. 4th Int. Symp. on Process Physics and Modeling in Semiconductor Technology, edited by Srinivasan, G.R., Murthy, C. C. and Dunham, S.T., Proc. Vol. 96-4 (Electrochem. Soc., Pennington, NJ 1996), p. 195.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed