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Interconnect-Related Degradation of PZT Capacitor for FeRAM

  • S. Kobayashi (a1), K. Amanuma (a2) and H. Hada (a2)

Abstract

Ferroelectric properties of a Pb(Zr,Ti)O3 (PZT) thin film capacitor with a conventional Al/TiN/Ti interconnect are seriously degraded by annealing at around 400°C. The degradation of the PZT capacitor is reduced as the interconnects are narrowed while the total area of the interconnects on the capacitor is fixed. This result cannot be understood by supposing that Ti diffusion into PZT degrades the ferroelectric properties. A possible cause for the degradation is stress placed on the PZT film during the 400°C annealing.

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