Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-19T02:52:08.410Z Has data issue: false hasContentIssue false

The Interaction of Laser Generated Methyl Radicals with Cd, Te, and CdTe Surfaces

Published online by Cambridge University Press:  21 February 2011

J.J. Zinck
Affiliation:
Hughes Research Laboratories, Malibu, CA
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA
P.D. Brewer
Affiliation:
Hughes Research Laboratories, Malibu, CA
J.E. Jensen
Affiliation:
Hughes Research Laboratories, Malibu, CA
Get access

Abstract

The mechanism of the interaction of methyl radicals with Cd, Te, and CdTe surfaces has been studied in ultrahigh vacuum by Auger electron spectroscopy and thermal desorption mass spectrometry. Methyl radicals generated by the laser photodissociation of acetone at 193 nm efficiently etch both Te and Te-rich CdTe surfaces. However, there is no evidencefor reaction of methyl radicals with Cd or stoichiometric CdTe. A temperature dependencein the rate of methyl radical etching of Te-rich CdTe is related to a competition between acetone scavanging of radicals on the surface and reaction of radicals to form volatile metalorganics. Acetone itself has a small but finite reaction probability with Te and Te-rich CdTe surfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Konova, A. A., Shopov, A., and Nedev, I., Thin Solid Films 140, 189 (1986).Google Scholar
2. Paneth, F. A., and Hofeditz, W., Ber. 64B, 2702 (1931)Google Scholar
3. Spencer, J. E., Dinan, J. H., Boyd, P. R., Wilson, H., and Buttrill, S. E. Jr., J. Vac. Sci. Technol. A7, 676 (1989).Google Scholar
4. Brewer, P. D., unpublished results.Google Scholar
5. Woodbridge, E. L., Fletcher, T. R., Leone, S. R., J. Phys. Chem. 92, 5387 (1988).Google Scholar
6. Brewer, P. D., Zinck, J. J., and Olson, G.L., to be published.Google Scholar
7. Zinck, J. J., to be published.Google Scholar
8. Irgolic, K. J., The Organic Chemistry of Tellurium, (Gordon and Breach Science Publishers, NY, 1974), p. 364.Google Scholar
9. Winters, H. F., J. Appl. Phys. 49, 5165 (1978).Google Scholar
10. Joyce, S., Langan, J. G., and Steinfeld, J. I., J. Chem. Phys. 88, 2027 (1988).Google Scholar
11. Stinespring, C. D. and Freedman, A., Chem. Phys. Lett. 143, 584 (1988).Google Scholar
12. Yu, C. F., Youngs, F., Tsukiyama, K., Bersohn, R., and Preses, J., J. Chem. Phys. 85, 1382 (1986).Google Scholar
13. Mullin, J. B. and Irvine, S. J. C., J. Vac. Sci. Technol. 21, 178 (1982).Google Scholar
14. Tan, H. S., Morawski, A., and Jones, W. E., Surface Sci. 195, L193 (1988).Google Scholar
15. Zinck, J. J., unpublished results.Google Scholar
16. Squire, D. W., Dulcey, C. S., and Lin, M. C., Chem. Phys. Lett. 116, 525 (1985).Google Scholar
17. Steacie, E. W. R., Atomic and Free Radical Reactions. Vol.1, (Reinhold Publishing Corp, NY, 1954), p. 331340.Google Scholar