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The Interaction of HCl With polycrystalline β-SiC: Evidence for a Site-Blocking Mechanism for HCl Inhibition of SiC CVD

Published online by Cambridge University Press:  10 February 2011

Michelle T. Schulberg ,
Mark D. Allendorf  and
Duane A. Outka
Michelle T. Schulberg
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
Mark D. Allendorf
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
Duane A. Outka
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
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Abstract

Chlorine-containing precursors are attractive for chemical vapor deposition (CVD) of SiC because they are less hazardous and more economical than silane precursors. The reactivity of HCl, a by-product of these reactions, on SiC is of particular interest because it has been reported that HCl inhibits SiC CVD, but the mechanism for this inhibition has not been identified. In this work the adsorption of HCl on polycrystalline β-SiC was examined with Auger Electron Spectroscopy (AES) and Temperature Programmed Desorption (TPD). HCl adsorbs readily on SiC, with an initial sticking probability of 0.1 at 300 K, and forms a strong bond, with an activation energy for desorption of 64 kcal/mol. The only product detected by TPD is HCl, which desorbs in a peak centered at 1010 K. There are no Si- or C-containing desorption products, demonstrating that HCl does not etch SiC under TPD conditions. These results are consistent with a site-blocking mechanism for HCl inhibition of SiC CVD, but not with an etching mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 471
Copyright
Copyright © Materials Research Society 1996

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References

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