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Interaction of Deuterium with Cavities In Crystalline Si and Mgo

Published online by Cambridge University Press:  15 February 2011

A. V. Fedorov ,
A. Van Veen  and
H. Schut
A. V. Fedorov
Affiliation:
IRI, Delft University of Technology, Mekelweg 15, 2629JB., The Netherlands
A. Van Veen
Affiliation:
IRI, Delft University of Technology, Mekelweg 15, 2629JB., The Netherlands
H. Schut
Affiliation:
IRI, Delft University of Technology, Mekelweg 15, 2629JB., The Netherlands
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Abstract

To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV D+ implantation with a dose of 1015 cm−2. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 231
Copyright
Copyright © Materials Research Society 1999

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