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Interaction of Cavities and Dislocations in Semiconductors

Published online by Cambridge University Press:  15 February 2011

D. M. Follstaedt ,
S. M. Myers ,
S. R. Lee ,
J. L. Reno ,
R. L. Dawson  and
J. Han
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, (dmfolls@sandia.gov)
S. M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, (dmfolls@sandia.gov)
S. R. Lee
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, (dmfolls@sandia.gov)
J. L. Reno
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, (dmfolls@sandia.gov)
R. L. Dawson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, (dmfolls@sandia.gov)
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, (dmfolls@sandia.gov)
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Abstract

Transmission electron microscopy of He-implanted Si-Ge and InGaAs shows an attractive interaction between cavities and dislocations. Calculation indicates that cavities are attracted to dislocations through surrounding strain fields, and strong binding (100s of eV) occurs when a cavity intersects the core. In a strained SiGe/Si heterostructure, He implantation enhances relaxation rates, and cavities bound to misfit dislocations show evidence of increasing relaxation at equilibrium by lowering dislocation energies. The interaction is expected for all crystalline solids, and gives insight into voids in GaN/sapphire and bubbles in He-implanted metals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 209
Copyright
Copyright © Materials Research Society 1997

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