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Interaction of A12O3-CAPPED Au/Zn/Au and Au/Te/Au Contacts With (001)GaAs Substrates

Published online by Cambridge University Press:  25 February 2011

X. W. Lin ,
Z. Liliental-Weber ,
J. Washburn ,
A. Piotrowska  and
E. Kaminska
X. W. Lin
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, U.S.A
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, U.S.A
J. Washburn
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, U.S.A
A. Piotrowska
Affiliation:
Institute of Electronic Technology, Al. Lotnikow 46, 02–668 Warsaw, Poland
E. Kaminska
Affiliation:
Institute of Electronic Technology, Al. Lotnikow 46, 02–668 Warsaw, Poland
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Abstract

HREM,TEM, and EDX were employed to study the cross sections of Au/Zn/Au and Au/Te/Au contacts to [001]-oriented GaAs substrates. The metal contacts fabricated by sequential vapor deposition were capped with an A12O3 thin film to form a closed system when subjected to a 420°C anneal for 3 min. For an as-deposited Au/Zn/Au/GaAs specimen, Zn was found to react with Au to form ordered phases of Au3Zn. These phases were found to be stable upon annealing. The interface between the annealed metallization and GaAs exhibited the same degree of uniformity and planarity as that of the as-deposited specimen. For a Au/Te/Au/GaAs specimen, annealing resulted in epitaxial growth of Ga2Te3 grains, forming a basically flat interface with GaAs, while Au single-crystal grains were found to protrude rather extensively into GaAs to form a facetted interface with the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 469
Copyright
Copyright © Materials Research Society 1992

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References

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