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Interaction Between Deposited Film Extrinsic Gettering and Intrinsic Gettering in CZ Silicon During Simulated CMOS Process Cycles

  • S. Hahn (a1), C.-C. D. Wong (a2), F. A. Ponce (a3) and Z. U. Rek (a4)

Abstract

The gettering effectiveness of various thin film structures on n-type CZ silicon wafers has been investigated using electron microscopy, synchrotron radiation topography and optical techniques. Polysilicon, silicon nitride, and poly/nitride films were deposited on etched wafer backsurfaces. The various materials characteristics were correlated with gate oxide breakdown voltage, minority carrier lifetime and yield of MOS capacitors. These studies show that the poly/nitride configuration is superior as a gettering technique.

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Interaction Between Deposited Film Extrinsic Gettering and Intrinsic Gettering in CZ Silicon During Simulated CMOS Process Cycles

  • S. Hahn (a1), C.-C. D. Wong (a2), F. A. Ponce (a3) and Z. U. Rek (a4)

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