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Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

  • Philomela Komninou (a1), Joseph Kioseoglou (a1), Eirini Sarigiannidou (a1), George P. Dimitrakopulos (a1), Thomas Kehagias (a1), Alexandros Georgakilas (a2), Gerard Nouet (a3) and Pierre Ruterana (a3)...

Abstract

The interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

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Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

  • Philomela Komninou (a1), Joseph Kioseoglou (a1), Eirini Sarigiannidou (a1), George P. Dimitrakopulos (a1), Thomas Kehagias (a1), Alexandros Georgakilas (a2), Gerard Nouet (a3) and Pierre Ruterana (a3)...

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