Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-19T14:32:42.671Z Has data issue: false hasContentIssue false
  • English
  • Français

Intentional Reconstruction of Silicon Network on the Surface and within Sub-Surface by H and Ar

Published online by Cambridge University Press:  15 February 2011

W. Futako ,
K. Fukutani  and
I. Shimizu
W. Futako
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku. Yokohama, Japan 226
K. Fukutani
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku. Yokohama, Japan 226
I. Shimizu
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku. Yokohama, Japan 226
Get access

Abstract

Silicon thin films were prepared by “Chemical Annealing” where the deposition of thin layer (<3 nm thick) by RF glow discharge of SiH4 and the treatment with hydrogen atoms (H) or triplet state of argon (3Ar) were repeated alternatating. Consequently, wide gap a-Si:H with the gap of 2.1 eV was made by H-treatmentat rather low substrate temperature (Ts<150 °C), while a-Si:H with the gap narrower than 1.6 eV was obtained by the treatment with 3Ar at high Ts (>300 °C), resulting from the release of excessive hydrogen. Both the wider or the narrower gap films exhibited low defect density lower than 1016 cm−3 and obvious improvements in the stability for light soaking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 495
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shirai, H., Das, D., Hanna, J. and Shimizu, I., Appl. Phys. Lett. 59, p.1096 (1991)Google Scholar
2. Asano, A., Appl. Phys. Lett. 56, p. 53 (1990)Google Scholar
3. Nakamura, K., Yoshino, K., Shinya, Y., Takeoka, S. and Shimizu, I., Jpn. J. Appl. Phys. 34, p. 442(1995)Google Scholar
4. Yoshino, K., Futako, W., Wasai, Y. and Shimizu, I., Mat. Res. Soc. Symp. Proc. 420, p. 335 (1996)Google Scholar
5. Williamson, D., private communication.Google Scholar
6. Mahan, A.H., Nelson, B.P., Salamon, S. and Crandall, R.S., J. Non-Cryst. Solids 137&138, p. 657 (1991)Google Scholar
7. Goto, M., Toyoda, H., Kitagawa, M., Hirao, T. and Sugai, H., Jpn. J. Appl. Phys. 35, p. y1009 (1996)Google Scholar