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The Integration of the Ferromagnetic Inductors into the Standard CMOS Chip

  • Oleg Nizhnik (a1), Olinver M. Vinluan (a1), Kohei Higuchi (a1), Koji Sonoda (a1) (a2), Masatoshi Ishii (a1) (a2) and Kazusuke Maenaka (a1) (a2)...

Abstract

An inductor in standard CMOS process having an inductance of 52 nH and a quality factor of 1.5 at frequency equal to 80 Mhz was fabricated. The polymer passivation layer of the standard CMOS inductor was etched out. The silicon substrate under the inductor, having a thickness of 280 μm was also etched out by deep reactive ion etching (DRIE). Ferrite material ZnFe2O4 and amorphous material Fe4.7Co70.3Si15B10 was then sputtered on top of the inductor sequentially. The same sputtering procedure was also performed into the bottom of the inductor. The result is an inductor that is sandwiched by multiple ferromagnetic layers. The inductance of the new ferromagnetic inductor has increased by 15% from 52 nH to 60 nH. The quality factor has also increased by 20% from 1.5 to 1.8.

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1. Ni, J., Hong, Z., Liu, B. Y.Improved On-chip Components for Integrated DC-DC Converters in 0.13μm CMOSESSCIRC, 2009
2. Sizikov, Gregory et al. . “Frequency Dependent Efficiency Model of On-Chip DC-DC Buck Converters”, 2010 IEEE 26-th Convention of Electrical and Electronics Engineers in Israel.
3. Schrohm, G. et al. . “Optimal Design of Monolithic Integrated DC-DC convertersIntegrated Circuit Design and Technology (ICICDT) 2006
4. Gardner, et al. , “Review of On-chip Inductor Structures with Magnetic FilmsIEEE TRANSACTIONS ON MAGNETICS, VOL. 45, NO. 10, OCTOBER 2009.
5. Liu, Y., Sellmyer, D.J., Daisuke Shindo in Handbook of Advanced Magnetic Material, Volume 1: Advanced Magnetic Materials: Nanostructural Effects, pp 192

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The Integration of the Ferromagnetic Inductors into the Standard CMOS Chip

  • Oleg Nizhnik (a1), Olinver M. Vinluan (a1), Kohei Higuchi (a1), Koji Sonoda (a1) (a2), Masatoshi Ishii (a1) (a2) and Kazusuke Maenaka (a1) (a2)...

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