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Integration of PECVD Tungsten Nitride as a Barrier Layer for Copper Metallization

Published online by Cambridge University Press:  10 February 2011

A. R. Ivanova ,
C. J. Galewski ,
C. A. Sans ,
T. E. Seidel ,
S. Grunow ,
K. Kumar  and
A. E. Kaloyeros
A. R. Ivanova
Affiliation:
Genus Inc., Sunnyvale, CA 94089
C. J. Galewski
Affiliation:
Genus Inc., Sunnyvale, CA 94089
C. A. Sans
Affiliation:
Genus Inc., Sunnyvale, CA 94089
T. E. Seidel
Affiliation:
Genus Inc., Sunnyvale, CA 94089
S. Grunow
Affiliation:
New York State Center for Advanced Technology and Physics Department, the University at Albany-SUNY, Albany, NY 12222
K. Kumar
Affiliation:
New York State Center for Advanced Technology and Physics Department, the University at Albany-SUNY, Albany, NY 12222
A. E. Kaloyeros
Affiliation:
New York State Center for Advanced Technology and Physics Department, the University at Albany-SUNY, Albany, NY 12222
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Abstract

Amorphous tungsten nitride (WNx) is a promising diffusion barrier for extending Cu metallization beyond 0.18 μm. This study evaluates the barrier performance, adhesion, and step coverage of PECVD WN 0.5 integrated with a CVD Cu seed layer. The WN0.5 films exhibit amorphous structure with 33% bottom and side-wall step coverage in 0.14 μm wide structures with 9:1 aspect ratio. The potential of 50 Å WN0.5 as an effective Cu barrier is shown by the absence of Secco etch-pits in the Si substrate after a 30 min anneal at 500°C. When deposited on PECVD WN0.5 the CVD Cu films exhibit uniform nucleation, and as deposited resistivity of 2.5 μΩ-cm. Step coverage of the CVD Cu is better than 95% in 0.14 μm structures. Adhesion exceeding epoxy strength of the CVD Cu seed layer even to air-exposed WN0.5 is demonstrated using stud-pull adhesion tests.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 321
Copyright
Copyright © Materials Research Society 1999

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