Skip to main content Accessibility help
×
Home

Integration of Multilayers in Er-Doped Porous Silicon Structures and Advances in 1.5 μm Optoelectronic Devices

  • H. A. Lopez (a1), S. Chan (a2), L. Tsybeskov (a2), H. Koyama (a2), V. P. Bondarenko (a3) and P. M. Fauchet (a2)...

Abstract

Infrared photoluminescence (PL) and electroluminescence (EL) from erbium-doped porous silicon (PSi) structures are studied. The PL and EL from the Er-doped PSi structures and the absence of silicon band edge recombination, point defect, and dislocation luminescence bands suggest that the Er-complex centers are the most efficient recombination sites. PSi multilayers with very high reflectivity (R ≥ 90%) in the 1.5 gim range have been incorporated in the structures resulting in a PL enhancement of over 100%. Stable and intense EL is obtained from the Er-doped structures. The EL spectrum is similar to that of the PL, but shifted towards higher energy. The unexpected shift in emission opens up the possibility for erbium related luminescence to encompass a larger part of the optimal wavelength window for fiber optic communications.

Copyright

References

Hide All
1. Ennen, H., Scheider, J., Pomrenke, G., and Axman, A., Appl. Phys. Lett. 43, 943 (1983).
2. Coffa, S., Priolo, F., Franzo, G., Bellani, V., Camera, A., and Spinella, C., Phys. Rev. B 48, 11782 (1993).
3. Michael, J., Benton, L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y.-H., Poate, J. M., and Kimerling, L. C., J. Appl. Phys. 70, 2762 (1991).
4. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).
5. Hirschman, K. D., Tsybeskov, L., Duttagupta, S. P., and Fauchet, P. M., Nature 384, 338 (1996).
6. Collins, R. T., Fauchet, P. M., and Tischler, M. A., Physics Today 50, 24 (1997).
7. Pavesi, L., La Revista del Nuovo Cimento 20 (10), 176 (1997).
8. Namavar, F., Lu, F., Perry, C. H., Cremins, A., Kalkhoran, N. M., Daly, J. T., and Soref, R. A., Mat. Res. Soc. Symp. Proc. 358, 375 (1995).
9. Kimura, T., Yokoi, A., Horiguchi, H., Saito, R., Ikoma, T., and Sato, A., Appl. Phys. Lett. 65, 983 (1994).
10. Polman, A., J. Appl. Phys. 82, 1 (1997).
11. Tsybeskov, L., Duttagupta, S. P., Hirschman, K. D., Moore, K. L., Hal[, D. G., and Fauchet, P. M., Appl. Phys. Lett. 70, 1790 (1997).
12. Coffa, S., Franzo, G., and Priolo, F., MRS Bulletin 23 (4), 2532 (1998).

Integration of Multilayers in Er-Doped Porous Silicon Structures and Advances in 1.5 μm Optoelectronic Devices

  • H. A. Lopez (a1), S. Chan (a2), L. Tsybeskov (a2), H. Koyama (a2), V. P. Bondarenko (a3) and P. M. Fauchet (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed