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Integration of fullerenes and carbon nanotubes with aggressively scaled CMOS gate stacks

Published online by Cambridge University Press:  01 February 2011

Udayan Ganguly ,
Chungho Lee  and
Edwin C. Kan
Udayan Ganguly
Affiliation:
Department of Materials Science and Engineering, Cornell University
Chungho Lee
Affiliation:
School of Electrical and Computer Engineering, Cornell University
Edwin C. Kan
Affiliation:
School of Electrical and Computer Engineering, Cornell University
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Abstract

Here we report the first study towards the integration of fullerenes and carbon nanotubes (CNT) in the gate stack of CMOS technology, which is a promising hybrid approach of top-down and bottom-up fabrication process. Prospective processes for C60 and CNT deposition over an aggressively scaled 2 nm gate oxide in the MOS capacitor structure have been monitored. CV measurements show minimal silicon contamination and interface states. Step charging at a specific voltage that corresponds to a fixed number density of C60 is used to establish the structural integrity and size-mono-dispersion of C60. The CV method can be further used to probe the charge injection into C60 and its anions to establish fundamental understanding of their molecular orbital (MO) structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 789 , 2003 , N16.3
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Hisamoto, D., Lee, W-C., Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., Anderson, E., King, T.J., Boko, J. and Hu, C., IEEE Trans. Electron Devices 47 (12) 2320 (2000)Google Scholar
[2] Liu, Z., Lee, C., Pei, G., Narayanan, V. and Kan, E. C., Mat. Res. Soc. Symp. Proc. 686, A5.3 (2001)Google Scholar
[3] Liu, Z., Lee, C., Narayanan, V., Pei, G. and Kan, E. C., IEEE Trans. Electron Devices 49 (9) 1606, (2002)Google Scholar
[4] Lee, C., Liu, Z. and Kan, E. C., Mat. Res. Soc. Symp. Proc. 737, F8.18 (2002)Google Scholar
[5] Shen, Y. N., Liu, Z., Minch, B. A., and Kan, E. C., IEEE Trans. Electron Devices 50 (10), 2171 (2003)Google Scholar
[6] Green, W. H. Jr, Fitzgerald, M. G. G., Fowler, P. W., Ceulemans, A. and Titeca, B. C., J. Phys. Chem. 100, 14892 (1996)Google Scholar
[7] Ruoff, R.S., Tse, D.S., Malhotra, R., Lorents., D.C., J. Phys. Chem. 97, 3379 (1993)Google Scholar
[8] Bahr, J. L., Mickelson, E. T., Bronikowski, M. J., Smalley, R. E., Tour, J M., Chemical Communications, p. 193, (2001)Google Scholar
[9] Franklin, N. R., Wang, Q., Tombler, T. W., Javey, A., Shim, M., and Dai, H., Appl. Phys. Lett. 81 (5), 913 (2002)Google Scholar
[10] Fuhrer, M., Park, H., and McEuen, P. L., IEEE Trans. on Nanotech. 1, 78 (2002).Google Scholar
[11] Schroeder, D.K., Semiconductor Material and Device Characterization, 3rd Ed. (John Wiley & Sons), p. 365 (1998)Google Scholar
[12] Park, H., Park, J., Lim, A. K.L., Anderson, E. H., Alivisatos, A. P., and McEuen, P. L., Nature 407, 57 (2000).Google Scholar
[13] Porath, D. and Millo, O., J. Appl. Phys. 81, (5), 2241 (1997)Google Scholar
[14] Greaney, M. A. and Gorun, S. M., J. Phys. Chem. 95, 7142 (1991)Google Scholar