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Integration Challenges for Advanced Salicide Processes and their Impact on CMOS Device Performance

Published online by Cambridge University Press:  14 March 2011

K. Wieczorek
Affiliation:
AMD Saxony Manufacturing GmbH, Postfach 110110, D-01330 Dresden, Germany
M. Horstmann
Affiliation:
AMD Saxony Manufacturing GmbH, Postfach 110110, D-01330 Dresden, Germany
H.-J. Engelmann
Affiliation:
AMD Saxony Manufacturing GmbH, Postfach 110110, D-01330 Dresden, Germany
K. Dittmar
Affiliation:
AMD Saxony Manufacturing GmbH, Postfach 110110, D-01330 Dresden, Germany
W. Blum
Affiliation:
AMD Saxony Manufacturing GmbH, Postfach 110110, D-01330 Dresden, Germany
A. Sultan
Affiliation:
AMD-Motorola Logic Alliance, 3501 Ed Bluestein Blvd., Austin, TX 78721
P. Besser
Affiliation:
AMD-Motorola Logic Alliance, 3501 Ed Bluestein Blvd., Austin, TX 78721
A. Frenkel
Affiliation:
AMD-Motorola Logic Alliance, 3501 Ed Bluestein Blvd., Austin, TX 78721
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Abstract

CoSi2 has emerged as the silicide of choice for 0.18μm CMOS technologies and below. Robustness and scaling-performance of an integrated CoSi2-module, however, is shown to critically depend upon careful optimization of each individual process-step. The impact of surface-preparation, capping layer, initial Co-thickness and thermal processing will be discussed. The scalability of an optimized process meeting all major requirements for application to ULSI devices is demonstrated for gate-length down to 60nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Murarka, S.P.: Silicides for VLSI-applications, Academic Press Inc., Orlando (FL), 1983 Google Scholar
[2] Kittl, J.A., Hong, Q.Z., Yang, H., Yu, N., Rodder, M., Apte, P.P., Shiau, W.T., Chao, C.P., Breedijek, T., Pas, M.F.; Mat. Res. Soc. Symp. Proc., 525, p.331336, 1998 Google Scholar
[3] Goto, K., Fushida, A., Watanabe, J., Sukegawa, T., Tada, Y., Nakamura, T., Yamazaki, T., Yamazaki, T., Sugii, T.; IEEE Trans. El. Dev., 46 (1), p.117138, 1999 Google Scholar
[4] Kondol, E., Maex, K.; Mat. Res. Soc. Proc., 470, p.245251, 1997 Google Scholar
[5] Maex, K., Lauwers, A., Besser, P., Kondoh, E., Potter, M. de, Steegen, A.; IEEE Trans. El. Dev., 46(7), p.15451550, 1999 Google Scholar
[6] Maex, K., Kondoh, E., Lauwers, A., Steegen, A., Potter, M. de, Besser, P., Proost, J.; Mat. Res. Soc. Symp. Proc., 525, p. 297306, 1998 Google Scholar
[7] Besser, P., Lauwers, A., Roelandts, N., Maex, K., Blum, W., Alvis, R., Stucchi, M., Potter, M. de; Mat. Res. Soc. Symp. Proc., 514, p. 375380, 1998 Google Scholar
[8] Maex, K., Materials Science and Engineering, R11(2-3), 1993 Google Scholar
[9] Sohn, D.K., Park, J.-S., Lee, B.H., Bae, J.-U., Oh, K.S., Lee, S.K., Byun, J.S., Kim, J.J.; IEDM Tech. Dig., p.10051008, 1998 Google Scholar