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Instabilities, Elasticity, and Wetting Effect in Multilayer Heteroepitaxial Growth

Published online by Cambridge University Press:  01 February 2011

Zhi-Feng Huang  and
Rashmi C. Desai
Zhi-Feng Huang
Affiliation:
School of Computational Science and Information Technology, Florida State University, Tallahassee, FL 32306–4120, U.S.A.; E-mail: huang@csit.fsu.edu
Rashmi C. Desai
Affiliation:
Department of Physics, University of Toronto, Toronto, Ontario M5S 1A7, Canada; E-mail: desai@physics.utoronto.ca
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Abstract

For multilayer semiconductor films comprising various material layers, the coupling of elastic states in different layers as well as the nonequilibrium nature of the growing process are essential in understanding the surface and interface morphological instability and hence the growth mechanisms of nanostructures in the overall film. We present the theoretical work on the stress-driven instabilities during the heteroepitaxial growth of multilayers, based on the elastic analysis and the continuous nonequilibrium model. We develop a general theory which determines the morphological evolution of surface profile of the multilayer system, and then apply the results to two types of periodic structures that are being actively investigated: alternating tensile/compressive and strained/spacer multilayers. The wetting effect, which arises from the material properties changing across layer-layer interfaces, is incorporated. It exhibits a significant influence of stabilization on film morphology, particularly for the short-period superlattices. Our results are consistent with the experimental observations in AlAs/InAs/InP(001) and Ge/Si(001) multilayer structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T9.2
Copyright
Copyright © Materials Research Society 2004

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