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Inspection Of Recombination Active Defects For Sige And Solar Cells

Published online by Cambridge University Press:  15 February 2011

O.V. Astafiev ,
V.P. Kalinushkin  and
N.V. Abrosimov
O.V. Astafiev
Affiliation:
General Physics Institute of RAS, 38, Vavilov str., Moscow, 117942, GSP-1, Russia, astf@kapella.gpi.ru
V.P. Kalinushkin
Affiliation:
General Physics Institute of RAS, 38, Vavilov str., Moscow, 117942, GSP-1, Russia, astf@kapella.gpi.ru
N.V. Abrosimov
Affiliation:
permanent addr: Institute of Solid State Physics of RAS, 142432, Chernogolovka, Russia present address: Institute of Crystal growth, Rudower Chaussee 6, Berlin, Germany
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Abstract

Mapping Low Angle Light Scattering method (MLALS) is proposed to study defect structure in materials used for solar cell production. Several types of defects are observed in Czochralski Si1−xGex (0.022<x<0.047) single crystals. Recombination activity of these defects is investigated. The possibility of contactless visualisation of grain boundary recombination in polysilicon is also demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 43
Copyright
Copyright © Materials Research Society 1997

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References

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