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In-situ XPS Study of ALD Ta(N) Barrier Formation on Organosilicate Dielectric Surface

Published online by Cambridge University Press:  17 March 2011

Junjun Liu ,
Junjing Bao ,
Michael Scharnberg  and
Paul S. Ho
Junjun Liu
Affiliation:
Laboratory for Interconnect and Packaging, Microelectronic Research Center, the University of Texas at Austin, Austin, TX 78712-1063, USA
Junjing Bao
Affiliation:
Laboratory for Interconnect and Packaging, Microelectronic Research Center, the University of Texas at Austin, Austin, TX 78712-1063, USA
Michael Scharnberg
Affiliation:
Lehrstuhl für Materuakverbunde, Technische Fakultät der Christian-Albrechts-Universität zu Kiel, Kaiserstr.2, D-24143 Kiel, Germany
Paul S. Ho
Affiliation:
Laboratory for Interconnect and Packaging, Microelectronic Research Center, the University of Texas at Austin, Austin, TX 78712-1063, USA
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Abstract

Beams of nitrogen and hydrogen radicals were investigated as surface pre-treatment and process enhancement techniques for atomic layer deposition (ALD) of tantalum nitride barrier layer on a dense organosilicate (OSG) low k film. In-situ x-ray photoelectron spectroscopy (XPS) studies of the evolution of the low k surface chemistry revealed an initial transient growth region controlled mainly by the substrate surface chemistry. Pre-treatment of the low k surface with radical beams, particularly with nitrogen radicals, was found to enhance significantly the chemisorption of the TaCl5 precursor on the OSG surfaces. The enhancement was attributed to the dissociation of the weakly bonded methyl groups from the low k surface followed by nitridation with the nitrogen radicals. In the subsequent linear growth region, atomic hydrogen species was able to reduce the chlorine content under appropriate temperature and with sufficient purge. The role of the atomic hydrogen in this process enhancement is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F2.6
Copyright
Copyright © Materials Research Society 2004

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References

1. Zhou, Y., Xu, G., Scherban, T., Leu, J., Kloster, G.. and Wu, C., Char. and Metro. for ULSI Technology, 455–61 (2003)Google Scholar
2. Besling, W., Satta, A., Schuhmacher, J., Abell, T., Sutcliffe, V., Hoyas, A., Beyer, G., Gravesteijn, D., and Maex, K., Proceedings of the IEEE 2002 IITC, 288–91 (2002)Google Scholar
3. Satta, A., Baklanov, M., Richard, O., Vantomme, A., Bebder, H., Conard, T., Beyer, G., Maex, K., Li, W.M., Elers, K.E., and Haukka, S., Micro. Eng., 60, 59 (2002)CrossRefGoogle Scholar
4. Ryan, E.T., Freeman, M., Svedberg, L., Lee, J.J., Guenther, T., Connor, J., Yu, K., Sun, J. and Gidley, D., Mater., Tech. and Rel. for Adv. Inter. and Low-k Diel., Mater. Res. Soc. Vol. 766, p89–94 (2003)Google Scholar
5. Abramowitz, P., Kiene, M. and Ho, P.S., Appl. Phys. Let., vol.74, no.22, 3293–531 (1999).CrossRefGoogle Scholar
6. Seah, M.P. and Spencer, S.J., J. Vac. Sci. Technol., A 21(2), 345–352 (2003)CrossRefGoogle Scholar
7. Kim, H., J. Vac. Sci. Technol., B 21(6), p2231–2261 (2003)CrossRefGoogle Scholar
8. Briggs, D. and Seah, M.P., Practical Surface Analysis, Vol. 1 (1990)Google Scholar
9. Powell, C.J. and Jablonski, A., NIST Standard Reference Database 82, ver. 1.0 (2001)Google Scholar
10. Kim, H., Cabral, C. Jr, Lavoie, C., and Rossnagel, S.M., J. of Vac. Sci. and Tech., B 20(4), 1321–1326 (2002)Google Scholar
11. Ritala, M., Kalsi, P., Riihelä, D., Kukli, K., Leskelä, M., and Jokinen, J., Chem. of Mater., 11, 1712–1718 (1999)CrossRefGoogle Scholar
12. Lide, D.R., CRC Handbook of Chemistry and Physics, 81st Edition (2000)Google Scholar
13.Http://chemviz.ncsa.uiuc.edu/content/doc-resources-bond.htmlGoogle Scholar
14. Laskel, M.ä and Ritala, M., Thin Solid Films, 409 138–146 (2002).CrossRefGoogle Scholar