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In-Situ Transmission Electron Microscopy of the Etching of Silicon (111) Surfaces by Oxygen

Published online by Cambridge University Press:  25 February 2011

J. M. Gibson  and
F. M. Ross
J. M. Gibson
Affiliation:
University of Illinois, Departments of Physics and Materials Science, Materials Research Laboratory, 104 S. Goodwin, Urbana IL61801
F. M. Ross
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974.
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Abstract

Silicon (111) surfaces have been etched in-situ in a ultra-high vacuum transmission electron microscope. Surface steps are observed to flow during etching, so that Si atoms are removed only from steps. This is in contrast to the behavior during the formation of an oxide layer reported previously. The nucleation of steps and their interaction with surface impurities is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 259
Copyright
Copyright © Materials Research Society 1992

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References

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