Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-16T19:57:00.645Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Studies of the Formation Sequence of Silicides During Vacuum (10-7 TORR)Thermal Annealing of TI/Polysilicon Bilayers

Published online by Cambridge University Press:  21 February 2011

Z. Ma ,
L. H. Allen  and
S. Lee
Z. Ma
Affiliation:
Department of Materials Science and Engineering, Universioty of Illinois at Urbana-Champaign, Urbana, IL 61801
L. H. Allen
Affiliation:
Department of Materials Science and Engineering, Universioty of Illinois at Urbana-Champaign, Urbana, IL 61801
S. Lee
Affiliation:
NCR Corporation, Microelectronic Division, Colorado Springs, CO 80916
Get access

Abstract

The formation of suicides during the thermal reaction of Ti/polysilicon bilayers has been investigated using both in-stu four point sheet resistance measurements and ex-situ measurements including X-ray diffraction, cross-sectional transmission electron microscopy and Auger electron spectroscopy. For a series of samples annealed at a ramp rate of 10°C/min the following sequence of changes in the bilayers occurred. At temperatures exceeding 350°C and prior to the silicidation oxygen from the vacuum system diffuses into the Ti film forming a solid solution of Ti(O) with O levels up to 20 %. An amorphous TixSiy layer is the first major suicide reaction observed at temperatures near 440°C. The first major crystalline phase is observed at 500°C and identified as C49 TiSi2. This phase was found to coexist at these temperatures with the partially consumed Ti(O) and the amorphous TixSiy layers. Further annealing above 700 °C results in the final structural transformation from C49 TiSi2 to C54 TiSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 661
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Holloway, K. and Sinclair, R., J. Appl. Phys. 61, 1359 (1987)Google Scholar
2. Wang, M.H. and Chen, L.J., Appl. Phys. Lett. 59, 2460 (1991)CrossRefGoogle Scholar
3. Ogawa, S., Kouzaki, T., Yoshida, T. and Sinclair, R., J. Appl. Phys. 70, 827 (1991).Google Scholar
4. Pantel, P., Levy, D. and Nicolas, D.. J. Appl. Phys. 62, 4319 (1987)Google Scholar
5. Lasky, J.B., Nakos, J.S., Cain, O.J. and Geis, P.J., IEEE Trans. Elec. Dev. 38, 262 (1991)Google Scholar
6. Raaijmakers, I. and Kim, K., J. Appl. Phys. 67, 6255 (1990)Google Scholar
7. Ma, E., Clevenger, L.A., Thompson, C.V. and Tu, K.N., Mat Res. Soc. Symp. Proc. 187, 83 (1990).CrossRefGoogle Scholar
8. Beyers, R., Coulman, D. and Merchant, P., J Appl. Phys. 61, 5110 (1987).Google Scholar
9. Jeon, H., Honeycut, J.W., Sukow, C.A., Humphreys, T.P., Nemanich, R.J. and Rozgonyi, G.A., Mat. Res. Soc. Symp. Proc. 198, 595 (1990)CrossRefGoogle Scholar
10. Wei, C., Raghaven, G., Dass, M., Frost, M., Brat, T. and Fraser, D., VI IEEE VLSI Multilevel Interconnection Conference, 241 (1989).Google Scholar
11. Xiao, Z., Jiang, H., Honeycut, J., Osburn, C., Mcguire, G. and Rozgonyi, G., Mat. Res. Soc. Symp. Proc. 182, 65 (1990)Google Scholar
12. Chou, T.C., Wong, C.Y. and Tu, K.N., J. Appl. Phys. 62, 2275 (1987).Google Scholar