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In-Situ Stress Measurements During Dry Oxidation of Silicon

Published online by Cambridge University Press:  10 February 2011

Chia-Liang Yu ,
Paul A. Flinn  and
John C. Bravman
Chia-Liang Yu
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
Paul A. Flinn
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
John C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
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Abstract

In this study, we present results of both in-situ and ex-situ measurements of stress generated during dry oxidation of silicon. We show that the mechanical stress in as-grown dry oxides is a strong function of oxidation temperature and oxide thickness, but a weak function of oxygen partial pressure. We have identified a structural relaxation phenomenon after the oxide is formed, and found that the viscosity of the oxide increases with its age; consequently, the stress relaxation slows down due to this increase of viscosity. In this paper, we present a one-dimensional mechanical model to simulate the stress generation and relaxation during dry oxidation of silicon. The simulations of both in-situ and ex-situ tests are in good agreement with the experimental measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 95
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Irene, E.A., J. Appl. Phys., 54, 5416 (1983).Google Scholar
2. Fargeix, A., Ghibaudo, G., and Kamarinos, G., J. Appl. Phys., 54, 2878 (1983).Google Scholar
3. Hasegawa, E., Ishitani, A., Akimoto, K., Tsukiji, M. and Ohta, N., J. Electrochem. Soc., 142, No. 1, 273 (1995).Google Scholar
4. Kobeda, E. and Irene, E.A., J. Vac. Sci. Technol. B 7, 163 (1989).Google Scholar
5. Kobeda, E. and Irene, E.A., J. Vac. Sci. Technol. B 6, 574 (1988).Google Scholar
6. Landsberger, L.M. and Tiller, W.A., Appl. Phys. Lett. 51, no. 18, p. 1416 (1987).Google Scholar
7. Tan, T.Y. and Goesele, U., Appl. Phys. Lett. 39, 86 (1981).Google Scholar
8. Reafferty, C.S., Landsberger, L.M., Dutton, R.W. and Tiller, W.A., Appl. Phys. Lett. 54, no. 2, p. 151 (1989).Google Scholar
9. New experimental results, to be published.Google Scholar
10. Yu, C., Flinn, P.A. and Bravman, J.C., in Amorphous and Crystalline Insulating Thin Films-1996, edited by Warren, W.L., Kanicki, J., Devine, R.A.B., Matsumura, M., Cristoloveanu, S. and Homma, Y., (Mater. Res. Soc. Proc. 446, Pittsburgh, PA 1997, to be published).Google Scholar
11. Scherer, G.W., in Relaxation in Glass and Composites, Ch. 6 and 11, John Wiley & Sons, New York (1986).Google Scholar
12. Witvrouw, A. and Spaepen, frans, J. Appl. Phys., 74, no. 12, p. 7154 (1993).Google Scholar
13. Volkert, C.A., J. Appl. Phys., 74, no. 12, p. 7107 (1993).Google Scholar
14. Flinn, P.A., Mack, A.S., Besser, P.R. and Marieb, T.N., MRS Bulletin, 18, 26 (1993).Google Scholar
15. Han, C.J., Ph.D. Thesis, 18O Isotopie Tracer Studies of Silicon Oxidation in Dry Oxygen, Elec. Eng. Dept., Stanford University, 1986.Google Scholar