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In-Situ Spectroscopic Ellipsometry for the Control of Si based Thin Multi-Layers Grown by UHV-CVD

  • F. Glowacki (a1), A. Larre (a2), F. Ferrieu (a1), Y. Campidelli (a1) and D. Bensahel (a1)...

Abstract

In-situ Spectroscopic Ellipsometry as a function of time is used to follow the growth of Si/SiGe Multi Quantum Well (MQW) structures. It provides both the starting surface control and the growth parameters understanding (thickness, growth rate, Ge content). Si and SiGe optical data were recorded at different temperatures on individual Si and SiGe layers. Using the measured indices and the known thicknesses of the layers, the experimental MQW data are fitted without adjustable parameters.

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In-Situ Spectroscopic Ellipsometry for the Control of Si based Thin Multi-Layers Grown by UHV-CVD

  • F. Glowacki (a1), A. Larre (a2), F. Ferrieu (a1), Y. Campidelli (a1) and D. Bensahel (a1)...

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