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In-Situ Spectroscopic Ellipsometry Applied to ZnSe and ZnCdSe Growth Process in Organometallic Vapor Phase Epitaxy

  • J. Iacoponi (a1), L. B. Bhat (a1), B. Johs (a1) and J.A. Woollam (a1)

Abstract

Spectroscopie ellipsometry is a well developed technique for studying the semiconductor materials and heterostructures. Here, we have applied this technique to in-situ studies of ZnSe and ZnCdSe growth in a low pressure organometallic vapor phase epitaxy system. The growth of ZnSe on GaAs was studied using a light source in the range 2 to 4 eV, and film thickness of a few tens of angstroms could be monitored by this technique. The band gap and the composition of Zn1-χCdχSe could also be measured as a function of real time. It was found that, for a gas phase DMCd composition of 60%, the amount of Cd incorporated in the layers is less than 25%. Spectroscopie ellipsometry is demonstrated to be a valuable technique for in-situ monitoring of semiconductor growth in organometallic vapor phase epitaxy systems.

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