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In-Situ Spectroscopic Ellipsometry Applied to ZnSe and ZnCdSe Growth Process in Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  25 February 2011

J. Iacoponi ,
L. B. Bhat ,
B. Johs  and
J.A. Woollam
J. Iacoponi
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, Lincoln, Nebraska 68508
L. B. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, Lincoln, Nebraska 68508
B. Johs
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, Lincoln, Nebraska 68508
J.A. Woollam
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, Lincoln, Nebraska 68508
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Abstract

Spectroscopie ellipsometry is a well developed technique for studying the semiconductor materials and heterostructures. Here, we have applied this technique to in-situ studies of ZnSe and ZnCdSe growth in a low pressure organometallic vapor phase epitaxy system. The growth of ZnSe on GaAs was studied using a light source in the range 2 to 4 eV, and film thickness of a few tens of angstroms could be monitored by this technique. The band gap and the composition of Zn1-χCdχSe could also be measured as a function of real time. It was found that, for a gas phase DMCd composition of 60%, the amount of Cd incorporated in the layers is less than 25%. Spectroscopie ellipsometry is demonstrated to be a valuable technique for in-situ monitoring of semiconductor growth in organometallic vapor phase epitaxy systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 237
Copyright
Copyright © Materials Research Society 1992

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References

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