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In-Situ Regrowthi of GaAs Through Controlled Phase Transformations and Reactions of Thin Films on GaAs
Published online by Cambridge University Press: 10 February 2011
Abstract
In-situ depositions and reactions are utilized in the study of phase formation from solid phase reactions. We report on the formation of epitaxial GaAs and the formation of NiAs or Ni2Ga3 by the exposure of Ni3GaAs to As4 or Ga fluxes. In-situ annealing of Ni on MBE-grown GaAs leads to Ni3GaAs, and subsequent reaction with As4 or Ga drives regrowth of GaAs. The structures were analyzed by RBS, XRD, TEM, and in-situ electrical measurements.
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- Copyright © Materials Research Society 1998
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