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In-Situ Optical Emission Spectra of Ti, TiN and TiSi2 Plasma During Thin Film Growth by Pulsed Laser Evaporation

  • S. Pramanick (a1) and J. Narayan (a1)

Abstract

The first optical emission spectra of Ti, TiN and TiSi2 plasma during growth of thin films by pulsed laser evaporation has been reported. A KrF excimer laser (248nm) with pulsewidth of 45ns operating on 5Hz repitition rate was used for deposition of refractory metal thin films using varying laser fluence of 4J/cm2 to 15J/cm2. Most of the radiative species seen in plasma belongs to atomic neutrals and ionic species such as Ti I, Ti II, Si I, Si II and N 11. Emission spectra was mostly dominated by neutral and ionic emission from Titanium (Ti I and Ti II).

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[1] Dijkkamp, D., Venkatesan, T., Wu, X. D., Shaheen, S. A., Jisrawi, N., Lee, Y. H.Min, McLean, W. L., and Croft, M., Appl. Phys. Lett. 51, 619 (1987).
[2] Singh, R.K., Narayan, J., Singh, A.K., and Krishnaswamy, J., Appl. Phys. Lett. 54, 2271 (1988).
[3] Biunno, N., Narayan, J., Hofmeister, S. K., Srivatsa, A. R., and Singh, R. K., Appl. Phys. Lett. 54, 1519 (1989).
[4] Tiwari, P., Longo, M., Matera, G., Sharan, S., Smith, P. L., and Narayan, J., TMS meeting proceedings ( 1991).
[5] Singh, R. K., and Narayan, J., Phys. Rev. B 41, 8843 (1990).

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In-Situ Optical Emission Spectra of Ti, TiN and TiSi2 Plasma During Thin Film Growth by Pulsed Laser Evaporation

  • S. Pramanick (a1) and J. Narayan (a1)

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