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In-Situ Monitoring Of Mocvd Grown Inall_ As/Gaas Epitaxial Layers By Two Laser Beams Reflectometry

Published online by Cambridge University Press:  15 February 2011

Jong-Hyeob Baek ,
Bun Lee ,
Sung Woo Choi ,
Jin Hong Lee  and
El-Hang Lee
Jong-Hyeob Baek
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. BOX 106, Taejon 305–600, Republic of Korea
Bun Lee
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. BOX 106, Taejon 305–600, Republic of Korea
Sung Woo Choi
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. BOX 106, Taejon 305–600, Republic of Korea
Jin Hong Lee
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. BOX 106, Taejon 305–600, Republic of Korea
El-Hang Lee
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. BOX 106, Taejon 305–600, Republic of Korea
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Abstract

We report application of in-situ laser reflectometry in monitoring InAl1−xAs (0 ≤ x ≤1) epitaxial layers grown on a GaAs substrate by low pressure metal-organic chemical vapor deposition. Two different lasers were used simultaneously: One was a He-Ne laser operating at 0.6328 μm and the other was a diode laser operating at 1.53 μm. The two laser beams were incident on the growing layer at an angle of 71° from the surface normal, and the reflected beams were detected by Si and Ge photovoltaic detectors, respectively. Since the epitaxial layer of InxAl1−xAs (0 ≤ x ≤1) has a wide range of index of refraction, the reflected signals showed a variety of patterns. The optical constants of the InxAl1−xAs epitaxial layers were obtained for the entire range of composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 115
Copyright
Copyright © Materials Research Society 1996

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References

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