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In-situ Measurement of Viscous Flow of Thermal Silicon Dioxide Thin Films at High Temperature

  • Chia-Liang Yu (a1), Paul A. Flinn (a1) and John C. Bravman (a1)

Abstract

With a newly constructed high temperature wafer curvature system, we measured significant viscous flow of thermal oxides at temperatures as low as 800°C. In-situ measurements were performed at temperatures between 800°C and 1100°C for wet and dry thermal oxide films of various thicknesses. We found that dry oxides have higher stresses and slower stress relaxation compared to wet oxides grown at higher temperatures. The viscosity of thermal oxide thin films was found to increase with time during relaxation and a structural relaxation process is suggested to explain this phenomenon.

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In-situ Measurement of Viscous Flow of Thermal Silicon Dioxide Thin Films at High Temperature

  • Chia-Liang Yu (a1), Paul A. Flinn (a1) and John C. Bravman (a1)

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