Skip to main content Accessibility help
×
Home

In-Situ Growth of C-Axis Oriented YBa2Cu3O7−x on Silicon with Composite Buffer Layers by Plasma Enhanced Metalorganic Chemical Vapor Deposition

  • Jiming Zhang (a1), Robin Gardiner (a1) and Peter S. Kirlin (a1)

Abstract

YBa2Cu3O7−x thin films have been grown in-situ on Si (100) with a composite buffer layer of Pt/Ta/ONO (ONO stands for a S1O2 / Si3N4 /SiO2 trilayer) by plasma enhanced metal organic chemical vapor deposition (PE-MOCVD). X-ray diffraction measurements indicate that c-axis oriented YBa2Cu3O7−x films are formed in-situ at substrate temperatures as low as 650 °C on Pt/Ta/ONO/Si. The composite P/Ta/ONO provided an adherent metallic interlayer and effectively prevented the interaction between YBa2Cu3O7−x and Si. Four probe resistivity measurements indicate the onset of superconductivity at 92 K and achieved zero resistance at 65 K.

Copyright

References

Hide All
1. Venkatesan, T., Chase, E. W., Wu, X. D., Inam, A., Chang, C. C., and Shakoohi, F. K., Appl. Phys. Lett. 53, 243 (1988).
2. Witanachchi, S., Patel, S., Kwok, H. S., and Shaw, D. T., Appl. Phys. Lett. 54, 578 (1989).
3. Fork, D. K., Fenner, D. B., Barton, R. W., Phillips, J. M., Connell, G. A. N., Boyce, J. B., and Geballe, T. H., Appl. Phys. Lett. 57, 1161 (1990).
4. Wu, X. D., Inam, A., Hedge, M.S., Wilkens, B., Chang, C. C., Huang, D. M., Nazar, L., Venkatesan, T., Miura, S., Matsubar, S., Miyasaka, Y., and Shohata, N., Appl. Phys. Lett. 54, 754 (1989).
5. Kumar, A. and Narayan, J., Appl. Phys. Lett. 59, 1785 (1991).
6. Jia, Q. X. and Anderson, W. A., Appl. Phys. Lett. 57, 304 (1990).
7. Kellett, B. J., James, J. H., Gauzzi, A., Pavuna, D., and Reinhart, F. K., Appl. Phys. Lett. 57, 1147 (1990).
8. Silver, R. M., Berezin, A. B., Wendman, M., and de Lozanne, A. L., Appl. Phys. Lett. 52, 2174 (1988).
9. For example, Chapman, B., Glow Discharge Processes, (John Willey & Sons, New York, 1980).
10. Lucovsky, G. and Tsu, D. V., J. Vac. Sci. Technol. A5, 2231 (1987).
11. Sakuma, T., Yamamichi, S., Matsubara, S., Yamaguchi, H., and Miyasaka, Y., Appl. Phys. Lett. 57, 2431 (1990).
12. Hatta, S., Higashino, H., Hirochi, K., Adachi, H., and Wasa, K., Appl. Phys. Lett. 53, 148 (1988).

In-Situ Growth of C-Axis Oriented YBa2Cu3O7−x on Silicon with Composite Buffer Layers by Plasma Enhanced Metalorganic Chemical Vapor Deposition

  • Jiming Zhang (a1), Robin Gardiner (a1) and Peter S. Kirlin (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed