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In-Situ Etch to Improve Chemical Beam Epitaxy Regrown AlgaAs/GaAs Interfaces for HBT Applications

  • Y.M. Hsin (a1), N. Y. Li (a1), C. W. Tu (a1) and P. M. Asbeck (a1)


We have studied the etching effect of AlxGa1-xAs (0≤ x ≤ 0.5) by trisdimethylaminoarsenic (TDMAAs) at different substrate temperatures, and the quality of the resulting etched/regrown GaAs interface. We find that the etching rate of AlxGa1-x As decreases with increasing Al composition, and the interface trap density of the TDMAAs etched/regrown interface can be reduced by about a factor of 10 as deduced from capacitance-voltage carrier profiles. A smooth surface morphology of GaAs with an interface state density of 1.4×l011 cm−2 can be obtained at a lower in-situ etching temperature of 550°C. Moreover, by using this in-situ etching the I-V characteristics of regrown p-n junctions of Al0.35Ga0.65As/Al0.25Ga0.75As and Al0.35Ga0.65As/GaAs can be improved.



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