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In-Situ Diagnostics of Diamond CVD

Published online by Cambridge University Press:  25 February 2011

J. E. Butler ,
F. G. Celii ,
P. E. Pehrsson ,
H. -t. Wang  and
H. H. Nelson
J. E. Butler
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375-5000.
F. G. Celii
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375-5000.
P. E. Pehrsson
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375-5000.
H. -t. Wang
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375-5000.
H. H. Nelson
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375-5000.
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Abstract

The deposition of diamond, a metastable crystalline form of carbon, from low pressure gases poses intriguing questions about the mechanisms of growth. Tunable IR Diode Laser Absorption Spectroscopy, Laser Multi-Photon Ionization Spectroscopy, and Laser Induced Fluorescence were used to characterize the gaseous environment in the Chemical Vapor Deposition growth of diamond films. The quality of the deposited material was examined by optical and SEM microscopies, and Raman, Auger, and XPS spectroscopies. When a reactant mixture of 0.5% methane in hydrogen, was passed across a hot Tungsten filament (2000 C), C2H2, C2H4, H and CH3 were detected above the growing diamond surface, and concentration limits for undetected species were determined. These results are discussed in terms of simple models for species formation and consumption, as well as the implications for the diamond growth mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 259
Copyright
Copyright © Materials Research Society 1989

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References

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