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In-Situ Crystallization and Doping of a-Si film by means of Spin-On-Glass

Published online by Cambridge University Press:  16 February 2011

Tomoyuki Sakoda ,
Chang-Dong Kim  and
Masakiyo Matsumura
Tomoyuki Sakoda
Affiliation:
Dept. of Physical Electronics, Tokyo Institute of Technology, 2–12–1 Oh-okayama, Meguro-ku, Tokyo 152, Japan.
Chang-Dong Kim
Affiliation:
Dept. of Physical Electronics, Tokyo Institute of Technology, 2–12–1 Oh-okayama, Meguro-ku, Tokyo 152, Japan.
Masakiyo Matsumura
Affiliation:
Dept. of Physical Electronics, Tokyo Institute of Technology, 2–12–1 Oh-okayama, Meguro-ku, Tokyo 152, Japan.
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Abstract

A novel technique has been proposed for selective and in-situ excimer-laser crystallization and doping to thin poly-Si films. Dopant atoms are supplied, during the Si laser crystallization process, to the Si film on glass from the doped SOG (spin-on-glass) film coated on the top. Conductivity of the processed film was increased to more than 10S/cm from about 10−8S/cm of the starting film. This technique has been applied to the bottom gate Amorphous-Si TFTs with self-aligned poly-Si source and drain. The electron field-effect mobility was 1.0cm2/Vs and the on/off current ratio was more than 106. No parasitic effects were observed, and the hole conduction was effectively suppressed. This in-situ crystallization and doping technique can also be applied to the top gate a-Si TFT process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 475
Copyright
Copyright © Materials Research Society 1994

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References

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