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In-Situ Characterization of the Surface State Density by Photoluminescence During Electrochemical Treatments of Silicon Surfaces

  • T. Dittrich (a1), V. Y. Timoshenko (a2) and J. Rappich (a3)

Abstract

The photoluminescence (PL) of c-Si is probed stroboscopically with single pulses of a N2 laser during electrochemical treatments (hydrogenation and anodic oxidation). The PL intensity of indirect semiconductors such as Si is controlled by the non-radiative surface and bulk recombination. By this reason the density of surface states can be estimated for unknown surfaces by using a calibrated standard. The surface state density of a hydrogenated Si surface increases by exchanging the electrolyte by gaseous N2 or water.

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In-Situ Characterization of the Surface State Density by Photoluminescence During Electrochemical Treatments of Silicon Surfaces

  • T. Dittrich (a1), V. Y. Timoshenko (a2) and J. Rappich (a3)

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