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In-Plane Residual Stresses in Filament-Evaporated Aluminum Films on Single Crystal Silicon Wafers

Published online by Cambridge University Press:  21 February 2011

Hai-Woong Park  and
Steven Danyluk
Hai-Woong Park
Affiliation:
University of Illinois at Chicago, Department of Civil Engineering, Mechanics, and Metallurgy, Box 4348, MC-246, Chicago, Illinois 60680
Steven Danyluk
Affiliation:
University of Illinois at Chicago, Department of Civil Engineering, Mechanics, and Metallurgy, Box 4348, MC-246, Chicago, Illinois 60680
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Abstract

The in-plane residual stresses of single crystal silicon wafers that were coated with filament-evaporated aluminum films have been obtained from measurements of strains produced by shadow Moir interferometry. The aluminum films were deposited as thin film layers over a 8.9cm diameter area on (100) p-type, 10.16cm diameter, 0.05cm thick single crystal silicon wafers, and the stresses were determined by an analysis that accounts for the finite dimensions of the samples. The aluminum film thicknesses varied from 70 to 78Onm. The aluminum films increased the inplane stresses of the wafers by 3 to 15MPa depending on the film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 365
Copyright
Copyright © Materials Research Society 1990

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