Skip to main content Accessibility help
×
Home

Initial Studies on The Heteroepitaxial Growth of Thin Films of (AI/In)N on Ain-Seeded (00.1) Sapphire by Single-Target Reactive Magnetron Sputtering

  • T. J. Kistenmacher (a1), S. A. Ecelberger (a1) and W. A. Bryden (a1)

Abstract

Thin films of (AI/In)N alloys have been deposited on AIN-nucleated (00.1) sapphire by reactive (pure N2 gas) magnetron sputtering and characterized by X-ray scattering, stylus profilometry, optical spectroscopy, and electrical transport measurements. Initial efforts have concentrated on producing films with compositions near Al0.31In0.69N (bandgap tailored to GaN). The alloy sputtering targets were disks fabricated by cold pressing appropriate molar mixtures of beads of 99.99% purity Al and In. The resulting thin films are composed of heteroepitaxial grains {(00.1)InNll(00.1)sapphire; (10.0)InNll(11.0)Sapphire} and their chemical composition has been deduced from the variation in the a cell constant (as measured by the X-ray precession method) to yield equilibrium film compositions near Al0.04In0.96N and Al0.25In0.75N, respectively. Preliminary results are presented on the dependence of the quality of heteroepitaxial growth and electrical and optical properties of. these AlxIn1−xN alloy films on various growth parameters: such as chemical composition; film thickness; morphology; and substrate temperature.

Copyright

References

Hide All
1. Starosta, K., Phys. Stat. Sol. 68, K55 (1981).
2. Starosta, K. and Marsik, J., Thin Solid Films 128, L41 (1985).
3. Kubota, K., Kobayashi, Y., and Fujimoto, K., J. Appl. Phys. 66, 2984 (1989).
4. Richardson, D. and Hill, R., J. Phys. C 5, 821 (1972).
5. Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl. Phys. Lett. 48, 415 (1988); H. Amano, I. Akasaki, K. Hiramatsu, N. Koide, and N. Sawaki, Thin Solid Films 163, 415 (1988); I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth 98, 209 (1989).
6. Kistenmacher, T. J. and Bryden, W. A., Appl. Phys. Lett. 59, 1844 (1991); T. J. Kistenmacher, S. A. Ecelberger, and W. A. Bryden, Proc. Mater. Res. Soc. 242, 675 (1992).
7. Jenkins, D. W. and Dow, J. D., Phys. Rev. B 39, 3317 (1989).
8.See, for example: Kistenmacher, T. J., Bryden, W. A., Morgan, J. S., and Poehler, T. O., J. Appl. Phys. 68, 1541 (1990); T. J. Kistenmacher, D. Dayan, R. Fainchtein, W. A. Bryden, J. S. Morgan, and T. O. Poehler, Proc. Mater. Res. Soc. 162, 573 (1990); T. J. Kistenmacher, W. A. Bryden, J. S. Morgan, D. Dayan, R. Fainchtein, and T. O. Poehler, J. Mater. Res. 6, 1300 (1991).
9. Yoshida, S., Misawa, S., and Gonda, S., J. Appl. Phys. 53, 6844 (1982).
10. Pankove, J. I., Phys. Rev. A 140, 2059 (1965); Pankove, J. I., Optical Processes in Semiconductors (Dover, New York, 1971).
11. Hovel, H. J. and Cuomo, J. J., Appl. Phys. Lett. 20, 71 (1972).
12. Bryden, W. A., Morgan, J. S., Fainchtein, R., and Kistenmacher, T. J., Thin Solid Films 213, 86 (1992).

Initial Studies on The Heteroepitaxial Growth of Thin Films of (AI/In)N on Ain-Seeded (00.1) Sapphire by Single-Target Reactive Magnetron Sputtering

  • T. J. Kistenmacher (a1), S. A. Ecelberger (a1) and W. A. Bryden (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed