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Initial Stage of Oxidation on Si(111)-7×7 Surface Investigated by Scanning Tunneling Microscope

  • Jeong Sook Ha (a1), Kang-Ho Park (a1), Seong-Ju Park (a2) and El-Hang Lee (a1)

Abstract

The initial oxidation of Si(111)-7×7 surface has been investigated by taking the STM images of samples dosed with oxygen at room temperature and high temperatures between 500°C and 750 °C. In particular, different site selectivities between two oxygen-induced features, bright and dark sites, were observed and explained in terms of the difference in potential energy curves. In addition to such a strong site selectivity under low oxygen partial pressure (l×10-9 torr), heavy surface etching by oxygen was observed at higher O2 partial pressures and temperatures resulting in the high density of monolayer-deep etch marks on terraces.

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Initial Stage of Oxidation on Si(111)-7×7 Surface Investigated by Scanning Tunneling Microscope

  • Jeong Sook Ha (a1), Kang-Ho Park (a1), Seong-Ju Park (a2) and El-Hang Lee (a1)

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