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Initial Stage Carrier Dynamics in Porous Silicon Using Ultrafast Spectroscopy
Published online by Cambridge University Press: 25 February 2011
Abstract
We have studied the electronic relaxation processes in porous silicon using a femtosecond pump and probe pulse–correlation technique at 440–nm wavelength. We have observed photoinduced absorption with a response time on the order of 5 ps. From picosecond luminescence decay measurements and the femtosecond pump and probe experiments, the carrier dynamics corresponding to our excitation conditions in porous Si is clarified as follows: carriers are excited in Si microcrystals and then rapidly thermalize to the surface state within 5 ps. After this, strong luminescence occurs from this state with decay components on the order of 1 ns.
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- Copyright © Materials Research Society 1993