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Initial Nucleation and the Effects on Epitaxial Silicide Formation

Published online by Cambridge University Press:  26 February 2011

R. J. Nemanich ,
C. M. Doland ,
R. T. Fulks  and
F. A. Ponce
R. J. Nemanich
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. M. Doland
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R. T. Fulks
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The initial nucleation processes for reactions of Pd and Ti on Si are studied by Raman scattering, and Auger electron spectroscopy. The epitaxial nature of the structures is verified by high resolution TEM. A model of the interface reaction is presented which describes the initial interdiffusion and subsequent nucleation. The aspects of nucleation in a thin film reaction are compared to nucleation processes in vacuum deposition. For Pd/Si a critical depostion thickness is observed which is related to a critical nuclei size. For Ti/Si higher annealing temperatures are required to bring about conditions for nucleation of the suicide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 255
Copyright
Copyright © Materials Research Society 1986

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References

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