Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-19T21:50:15.507Z Has data issue: false hasContentIssue false

Initial Growth Stages of Epitaxial BaTiO3 Films on Vicinal SrTiO3:Nb (001) Substrates

Published online by Cambridge University Press:  17 March 2011

A. Visinoiu
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany
M. Alexe
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany
H. N. Lee
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany
D. N. Zakharov
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany
A. Pignolet
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany
D. Hesse
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany
U. Gösele
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany
Get access

Abstract

The growth mechanism of epitaxial BaTiO3 films on vicinal Nb-doped SrTiO3 (SrTiO3:Nb) (001) substrate surfaces was studied in terms of surface morphology, crystalline orientation, microstructure, and film/substrate interface. Well-oriented BaTiO3 thin films were grown on SrTiO3 substrates with well-defined terraces by pulsed laser deposition. The regularly terraced TiO2-terminated surfaces of vicinal SrTiO3:Nb (001) substrates were prepared by a definite chemical and thermal treatment. Under our conditions, BaTiO3 seems to grow with a layer-then-island (Stranski-Krastanov) growth mechanism. In order to investigate the orientation and crystallinity of the BaTiO3 films, x-ray diffraction and high-resolution transmission electron microscopy were performed. Ferroelectricity of the BaTiO3 films was proved by electrical measurements performed on Pt/BaTiO3/SrTiO3:Nb heterostructures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lines, M. E. and Glass, A. M., in Principles and Applications of Ferroelectrics and Related Materials, edited by Marchall, W. and Wilkinson, D.H. (Clarendon Press, Oxford, 1977), p. 245.Google Scholar
2. Horwitz, J. S. and Sprague, J. S., in Pulsed Laser Deposition of Thin Films, edited by Chrisey, D. B. and Hubler, G. K. (Wiley, New York, 1994), p. 231.Google Scholar
3. Auciello, O., in Handbook of Crystal Growth, edited by Hurle, D. T. J. (Elsevier Science, Amsterdam, 1994), Vol. 3A, p. 367. Google Scholar
4. Tabata, H., Tanaka, H., and Kawai, T., Appl. Phys. Lett. 65, 1970 (1994).Google Scholar
5. Norton, M. G., and Carter, C. B., J. Mater. Res. 5, 2762 (1990).Google Scholar
6. Kang, Y. S., Tanaka, I., Adaki, H., and Park, S. J., Jpn. J. Appl. Phys. 35, L1614 (1996).Google Scholar
7. Tabata, H., Tanaka, H., Kawai, T., and Okuyama, M., Jpn. J. Appl. Phys. 34, 544 (1995).Google Scholar
8. Koster, G., Rijnders, A. J. H. M., Blank, D. H. A., and Rogalla, H., Physica C 339, 215 (2000).Google Scholar
9. Kawasaki, M., Takahashi, K., Maeda, T., Tsuchiya, R., Shinohara, M., Ishiyama, O., Yonezawa, T., Yoshimoto, M., and Koinuma, H., Science 266, 1540 (1994).Google Scholar