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Initial growth stages of CeO2 nanosystems by Plasma-Enhanced Chemical Vapor Deposition

  • Davide Barreca (a1), Alberto Gasparotto (a1), Eugenio Tondello (a1), Stefano Polizzi (a2), Alvise Benedetti (a2), Cinzia Sada (a3), Giovanni Bruno (a4) and Maria Losurdo (a4)...

Abstract

Nanocrystalline CeO2 thin films were synthesized by Plasma-Enhanced Chemical Vapor Deposition using Ce(dpm)4 as precursor. Film growth was accomplished at 150–300°C either in Ar or in Ar-O2 plasmas on SiO2 and Si(100) with the aim of studying the effects of substrate temperature and O2 content on coating characteristics. Film microstructure as a function of the synthesis conditions was investigated by Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM), while surface morphology was analyzed by Atomic Force Microscopy (AFM). Surface and in-depth chemical composition was studied by X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS).

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Initial growth stages of CeO2 nanosystems by Plasma-Enhanced Chemical Vapor Deposition

  • Davide Barreca (a1), Alberto Gasparotto (a1), Eugenio Tondello (a1), Stefano Polizzi (a2), Alvise Benedetti (a2), Cinzia Sada (a3), Giovanni Bruno (a4) and Maria Losurdo (a4)...

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