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Initial Growth of Ag/Si(100) Studied with High Spatial Resolution Aes and Sem

  • Frank C. H. Luo (a1), Gary G. Hembree (a2) and John A. Venables (a3)


The initial growth of Ag on reconstructed Si(100) has been studied with biassed secondary electron imaging (b-SEI) and Auger electron spectroscopy (AES) in an ultra-high vacuum (UHV) scanning transmission microscope (STEM) with nanometer resolution. Small Ag islands have been observed with strong contrast in b-SE images. Anisotropic growth, correlated with the (2×1) and (1×2) dimer reconstruction, is seen at room temperature and sub-monolayer (ML) coverage. Large Ag islands (∼1 μm) formed at 475 °C substrate temperature have even more dramatic forms with large aspect ratios. The Stranski-Krastanov (SK) mode is confirmed at both temperatures by AES and b-SEI between the islands, with the intermediate layer coverage equal to 0.5 ML or less.



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