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InGaN-Channel FETs – Growth, Technology and Characteristics

  • E. Kohn (a1), I. Daumiller (a1), M. Neuburger (a1), M. Seyboth (a2), C. Kirchner (a2) and M. Kamp (a3)...

Abstract

Making use of the polar nature of III-nitride heterostructures, a new FET device concept is proposed. The structure contains an InGaN QW channel sandwiched in between two GaN barrier layers. The charge inthis structure is mainly generated by the strain field in the InGaN layer and is an electron/hole dipole sheet charge located at the opposite InGaN/GaN interfaces. To obtain nchannel characteristics the hole charge at the rear interface (for Ga-face oriented material) is compensated by donor doping of the channel or by modulation doping from the real GaN barrier layer. Growth, processing technology and characteristics of first fabricated devices is discussed.

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