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InGaAs/InP Multiquantum well Structures Grown by Trichloride Vapor Phase Epitaxy

  • K. W. Wang (a1), V. D. Mattera (a2), K. Tai (a1), S. N. G. Chu (a1), D. D. Roccasecca (a1), L. Luther (a2) and G. Livescusecca (a2)...

Abstract

Long wavelength (l.3pm<X<l.551un) InGaAs/InP multiquantum well (MQW) PIN structures in which the quantum confined Stark effect can be observed, are of particular interest because of their potential for high modulation contrast ratios and high speed operation. The chemistry of trichloride VPE lends itself to the growth of high purity InGaAsP heterostructures which are essential for the realization of high performance optical modulators and switches. In this study, we investigate the application of multi-frit trichloride VPE for the highly uniform epitaxial growth of InGaAs/InP MQW structures on two-inch InP substrates for advanced photonic device applications. The growth of MQW structures with various well thicknesses was studied as was the effect of substrate orientation. The structures have been characterized by infrared absorption and photoluminescence spectroscopy, cross-sectional transmission electron microscopy and double crystal x-ray diffraction.

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