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Infrared Cathodoluminescence Studies from Dislocations in Silicon in tem, a Fourier Transform Spectrometer for Cl in Tem and Els/cl Coincidence Measurements of Lifetimes in Semiconductors

  • R. J. Graham (a1), J.C.H. Spence (a1) and H. Alexander (a2)

Abstract

In this paper we report the first observations by cathodoluminescence in TEM of radiative infrared emission from dislocations in silicon. These results were obtained at 23-25K in a Philips EM400 electron microscope. Our results are interpreted in the light of earlier photoluminescence work, and the prospects for obtaining spectra from a small number of well characterized dislocations with high spatial resolution are reviewed. Preliminary results are also reported showing the infrared band-gap emission spectrum of GaInAs at 90K recorded using a small Fourier Transform Spectrometer fitted to the same electron microscope. Finally, we describe timing coincidence experiments from samples in which only those visible CL photons are counted which arrive at the detector at the same time as the corresponding transmitted electron energy loss event. We describe the use of this technique for life-time mapping in semiconductors.

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Infrared Cathodoluminescence Studies from Dislocations in Silicon in tem, a Fourier Transform Spectrometer for Cl in Tem and Els/cl Coincidence Measurements of Lifetimes in Semiconductors

  • R. J. Graham (a1), J.C.H. Spence (a1) and H. Alexander (a2)

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