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The Influence of the Void Structure on Deuterium Diffusion in a-Si:H

  • M. J. Van Den Boogaard (a1) (a2), S. J. Jones (a1), Y. Chen (a1), D. L. Williamson (a1), R. A. Hakvoort (a3), A. Van Veen (a3), A. C. Van Der Steege (a4), W. M. Arnold Bik (a4), W. G. J. H. M. Van Sark (a4) and W. F. Van Der Weg (a4)...

Abstract

We have used small-angle X-ray scattering (SAXS) and Doppler-broadening measurements of positron-annihilation radiation to study changes in the microvoid distribution in PECVD a-Si:H films during annealing. From a comparison of data on deuterium diffusion with information obtained from SAXS we conclude that changes, during annealing, in the dispersive character of deuterium diffusion are likely to be caused by void formation through clustering of smaller structural defects.

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