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Influence of the Distribution of Tail States in a-Si:H on the Field Dependence of Carrier Drift Mobilities

Published online by Cambridge University Press:  21 March 2011

Monica Brinza ,
Evguenia V. Emelianova ,
André Stesmans  and
Guy J. Adriaenssens
Monica Brinza
Affiliation:
Laboratorium voor Halfgeleiderfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium.
Evguenia V. Emelianova
Affiliation:
Laboratorium voor Halfgeleiderfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium.
André Stesmans
Affiliation:
Laboratorium voor Halfgeleiderfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium.
Guy J. Adriaenssens
Affiliation:
Laboratorium voor Halfgeleiderfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium.
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Abstract

Exponential distributions of tail states have been able, within the framework of a multiple-trapping transport model, to account rather well for the time-of-flight photoconductivity transients that are measured with ‘standard’ a-Si:H, i.e. material prepared by plasma-enhanced chemical vapor deposition at ∼250°C. A field-dependent carrier mobility in the dispersive transport regime is part of the observations. However, samples prepared in an expanding thermal plasma, although still exhibiting the dispersive transients, fail to show this field dependence. The presence of a Gaussian component in the density of valence-band tail states can account for such behavior for the hole transients. Nanoscale ordered inclusions in the amorphous matrix are thought to be responsible for the Gaussian density of states contribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A5.6
Copyright
Copyright © Materials Research Society 2004

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References

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