Skip to main content Accessibility help
×
Home

Influence of Substrate Preparation on the Two-Stage MOCVD of CdTe on (001)GaAs

  • T.T. Cheng (a1), M. Aindow (a1), I.P. Jones (a1), J.E. Hails (a2), A. Graham (a2), J. Giess (a2), D.J. Williams (a2) and M.G. Astles (a2)...

Abstract

A TEM study of the initial nucleation layers for the two-step growth of CdTe on 2°-off (001) GaAs substrates by MOCVD is presented. When the substrates are degreased and etched in the usual manner, the initial deposits are oriented with their axes parallel to those of the substrates. When the substrates are, instead, prepared by thermal etching at 545-585°C, the initial deposits contain both (001) and (111)-oriented grains. When these polycrystalline initial deposits are heated to the “bulk” growth temperature, epitaxial regrowth occurs giving a single crystal film with a very distinctive anisotropic defect microstructure. Possible reasons for these effects are discussed.

Copyright

References

Hide All
[1] Brown, P.D., Hails, J.E., Russell, G.J., and Woods, J., Appl. Phys. Lett. 50, 1144 (1987).
[2] Cheng, T. T, Pirouz, P., and Powell, J.A., Mat. Res. Soc. Symp. Proc. 148, 229 (1989).
[3] Tatarenko, S., Cibert, J., Gobil, Y., Feuillet, G., Saminadayar, K., Chami, A.C. and Ligeon, E., Appl. Surface Science 41/42, 470 (1989).
[4] Cheng, T.T., Aindow, M., Jones, I.P., Hails, J.E., Williams, D.J. and Astles, M.G., J. Crystal Growth 135, 409 (1994).
[5] Bourret, A. and Feuillet, G., Mat. Res. Soc. Symp. Proc. 295, 71 (1993).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed