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Influence of Substrate Preparation on the Two-Stage MOCVD of CdTe on (001)GaAs

Published online by Cambridge University Press:  22 February 2011

T.T. Cheng ,
M. Aindow ,
I.P. Jones ,
J.E. Hails ,
A. Graham ,
J. Giess ,
D.J. Williams  and
M.G. Astles
T.T. Cheng
Affiliation:
School of Metallurgy and Materials, The University of Birmingham, Edgbaston, B15 27TT, UK
M. Aindow
Affiliation:
School of Metallurgy and Materials, The University of Birmingham, Edgbaston, B15 27TT, UK
I.P. Jones
Affiliation:
School of Metallurgy and Materials, The University of Birmingham, Edgbaston, B15 27TT, UK
J.E. Hails
Affiliation:
Defence Research Agency, Electronics Division, Malvern, WR14 3PS, UK
A. Graham
Affiliation:
Defence Research Agency, Electronics Division, Malvern, WR14 3PS, UK
J. Giess
Affiliation:
Defence Research Agency, Electronics Division, Malvern, WR14 3PS, UK
D.J. Williams
Affiliation:
Defence Research Agency, Electronics Division, Malvern, WR14 3PS, UK
M.G. Astles
Affiliation:
Defence Research Agency, Electronics Division, Malvern, WR14 3PS, UK
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Abstract

A TEM study of the initial nucleation layers for the two-step growth of CdTe on 2°-off (001) GaAs substrates by MOCVD is presented. When the substrates are degreased and etched in the usual manner, the initial deposits are oriented with their axes parallel to those of the substrates. When the substrates are, instead, prepared by thermal etching at 545-585°C, the initial deposits contain both (001) and (111)-oriented grains. When these polycrystalline initial deposits are heated to the “bulk” growth temperature, epitaxial regrowth occurs giving a single crystal film with a very distinctive anisotropic defect microstructure. Possible reasons for these effects are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 581
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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