Skip to main content Accessibility help
×
Home

Influence of Substrate Annealing Temperature upon Deep Levels in n-Type 4H SiC

  • Martin E. Kordesch (a1), Florentina Perjeru (a1) and R. L. Woodin (a2)

Abstract

The evolution of deep levels that depend upon annealing temperature is investigated for n-type 4H SiC-Ni Schottky barriers. Several samples, cut from the same wafer, have been left unheated or annealed at 400°C, 700°C and 900°C, in air. Deep level transient spectroscopy (DLTS) has been used to investigate deep levels in all four sets of samples. Electron traps with activation energies EC-ET = 0.19 to 0.5 eV are observed, as well as a hole trap in the sample annealed at 900°C at energy ET-EV = 0.14 eV.

Copyright

References

Hide All
1. Hingorani, N. G. and Stahlkopf, K. E., “High-Power Electronics,” Scientific American, vol. 269, pp. 7885, (1993).
2. Bhatnagar, M. and Baliga, B. J., “Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices,” IEEE Transactions on Electron Devices, vol. 40, pp. 645655, (1993).
3. Baliga, B. J., “Power Semiconductor Devices for Variable-Frequency Drives,” Proceedings of the IEEE, vol. 82, pp. 11121122, (1994).
4. Trew, R. J., Yan, J.-B., and Mock, P. M., Proceedings of the IEEE, vol. 79, pp. 598620, (1991).
5. Pensl, G. and Choyke, W. J., Physica B, 185, p.264 (1993).
6. Frank, T., Troffer, T., Pensl, G., Nordell, N., Karlsson, S., and Schoner, A., Silicon Carbide, III-Nitrides and Related Materials, pp.681684 (1998).
7. Suttrop, W., Pensl, G., Lanig, P., Appl. Phys. A 51, p.231 (1990).
8. Mitchel, W.C., Perrin, R., Goldstein, J., Roth, M., Ahoujja, M., Smith, S.R., Evwaraye, A.O., Solomon, J.S., Landis, G., et al., Silicon Carbide and Related Materials, Pts.1&2, 264–2: 545548 (1998).
9. Ballandovich, V.S., Semiconductors 33 (11) pg 1118 (1999).
10. Ikeda, M., matsunari, H., and Tanaka, T., J. Lumin. 20 pg. 111 (1979).
11. Dalibor, T., Pensl, G., Yamamoto, T., Kimoto, T., Matsunami, H., Sridhara, S.G., Nishner, D. G., Devaty, R.P. and Choyke, W.J., Carbide, Silicon, III-Nitrides and Related Materials, pp.553556 (1998).

Related content

Powered by UNSILO

Influence of Substrate Annealing Temperature upon Deep Levels in n-Type 4H SiC

  • Martin E. Kordesch (a1), Florentina Perjeru (a1) and R. L. Woodin (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.