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Influence of Rapid Thermal Processing on Minority Carrier Diffusion Length in Silicon

Published online by Cambridge University Press:  25 February 2011

Wolfgang A. Eichammer ,
Thuong-QUat Vu  and
P. Siffert
Wolfgang A. Eichammer
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), 23 rue du Loess, F-67037 Strasbourg Cedex, France
Thuong-QUat Vu
Affiliation:
Now at: California Institute of Technology, Pasadena, California 91125
P. Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), 23 rue du Loess, F-67037 Strasbourg Cedex, France
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Abstract

Minority carrier diffusion length measurements (SPV-method) are presented which illustrate the role of contamination, residual impurity content and surfaces in the formation of RTP-induced recombination centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 185
Copyright
Copyright © Materials Research Society 1989

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References

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