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Influence of Point Defects on GaAs Devices

  • David C. Look (a1)

Abstract

From electron-irriadiation studies, it is known that point defects can strongly affect the electrical properties of GaAs-based MESFET's, MODFET's, solar cells, resonant-tunneling diodes, MIMIC circuits and other devices. As an example, 1 × 1016 cm−2, 1 MeV electrons reduce the transconductance in a 1 μm by 200 μm MESFET by nearly an order of magnitude. Fortunately, annealing at 350 °C for 10 min. can largely restore the device performance, although not without some adverse effects. Point defects, or simple point defect complexes, can also exist in as-grown GaAs and affect devices in several different ways. For example, an As-rich stoichiometry can lead to an abundance of Ga vacancies, and thus to a higher Si donor activation in implanted MESFET devices; however, it can also promote an increase in unwanted impurities which sit on the Ga site. As another example, extremely high (> 3 × 1019 cm−3 ) concentrations of As arntisites, which are found in MBE GaAs grown at 200°C, lead to very unusual electrical and optical properties, and make possible a highly useful buffer material anid a very fast photoconductive switch. However, there are also adverse effects here, such as slow-transients in some MODFET devices, which may result from defect diffusion. Thus, the effects of point defects in GaAs devices must be understood.

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1. AuCoin, T.R. and Savage, R.O., in Gallium Arsenide Technology, edited by Ferry, D. (Howard W. Sams, Indianapolis, 1985) p. 47.
2. Look, D.C., in Semi-Insulating III-V Materials. Malmso 1988, edited by Grossman, G. and Ledebo, L. (Adam Hilger, Bristol, 1988) p. 1.
3. Jaros, M. and Brand, S.,Phys. Rev. B 14, 4494 (1976).10.1103/PhysRevB.14.4494
4. Sankey, O.F. and Dow, J.D., Appl. Phys. Lett. 38, 685 (1981).10.1063/1.92479
5. Wosinski, T. and Figielski, T., Inst. Phys. Conf. Ser. 104, 151 (1989).
6. Look, D.C. and Sizelove, J.R., J. Appl. Phys. 62, 3660 (1987).10.1063/1.339246
7. Meulenberg, A., Dozier, C.M., Anderson, W.T., Mittleman, S.D., Zuglich, M.H., asl Caefer, C.E., IEEE Truns. Nucl. Sci. 34, 1745 (1987).10.1109/TNS.1987.4337548
8. Loescher, D.H. and Pyo, M.L., Proc. 1989 GOMAC Conf., 393 (1989).
9. Eutsymiou, P.C., Baunbury, P.C., Papaioannou, G.J., and Zandas, G.E., Phys. Stat. Sol.(a) 116, K133 (1989).10.1002/pssa.2211160172
10. Jansousek, B.K., Yamuda, W.E., Krantz, R.J., and Bloss, W.L., J. Appl. Phys. 63, 1678 (1988).10.1063/1.339901
11. Meulenberg, A.E., Hung, H-L.A., Peterson, K.E., and Anderson, W.T., IEEE Truns. Electron. Dev. ED–35, 2125 (1988).10.1109/16.8786
12. Brudnyi, V.N., Gaman, V.I., and Diamond, V.M., Solid-State Electronics 31, 1093 (1988).10.1016/0038-1101(88)90411-X
13. Loo, R.Y., Kamath, G.S., and Li, S.S., IEEE Trans. Electron Dev. 37, 485 (1990).10.1109/16.46387
14. Mao, J.M., Zlou, J.M., Zhang, R.L., Jin, W.M., Bao, C.L., arsd Huang, Y., Appl. Phys. Lett. 56, 548 (1990).10.1063/1.102741
15. Barry, A.L., Wojcik, R., ansi MacDiarmid, A.L., IEEE Trans. Nucl. Sci. 36, 2400 (1989).10.1109/23.45454
16. Mumford, P. (unspublished).
17. Look, D.C., Walters, D.C., Kemerley, R.T., King, J.M., Mier, M.G., Sewell, J.S., and Sizelove, J.S., J. Electronic Mat. 18, 487 (1989).10.1007/BF02657777
18. Hyuga, F., Watanabe, K., Osaka, J., and Hoshikawa, K., Appl. Phys. Lett. 48, 1742 (1986).10.1063/1.96821
19. Klein, P.B., Nordquist, P.E.R., and Siebermann, P.G., J. Appl. Phys. 51, 4861 (1980).10.1063/1.328321
20. Look, D.C. and Pomrenke, G.S., J. Appl. Phys. 54, 3249 (1983).10.1063/1.332487
21. Smith, F.W., Calawa, A.R., Chen, C-L., Manfra, M.J., and Mahoney, L.J., IEEE ELectron Dev. Lett. EDL–9, 77 (1988).10.1109/55.2046
22. Look, D.C., Walters, D.C., Manasreh, M.O., Sizelove, J.R., Stutz, C.E., and Evans, K.R., Phys. Rev. B (to be published).
23. Kaminska, M., Weber, E.R., Liliental-Weber, Z., Leon, R., and Rek, Z.U., J. Vac. Sci. Technol. B 7, 710 (1989).10.1116/1.584630
24. Lin, B. J-F., Kocot, C.P., Mars, D.E., and Jaeger, R., IEEE Trans. On Electron Dev. ED–37, 46 (1990).10.1109/16.43799

Influence of Point Defects on GaAs Devices

  • David C. Look (a1)

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